The investigation of surface properties of oxides plays a key role for the detailed understanding of defects, doping and the influence of growth parameters. Scanning tunneling microscopy (STM) is a powerful tool in order to obtain structural information with atomic resolution from the investigated surfaces. Using scanning tunneling spectroscopy (STS), information about the electronic states can be obtained. The electronic structure of wide-band-gap oxides is of interest in order to determine the origin of the rather high electrical conductivity, which at present is unclear.
In this project, the structural and electronic poperties of In2O3 and Ga2O3 surfaces are analyzed by way of STM and STS measurements. Apart from experiments on clean surfaces, measurements with controlled adsorption of gas/fluid atoms/molecules are performed. Moreover, we also want to study complex oxides with new, advanced scanning tunneling microscopy techniques.
Major accomplishments expected:
Collaboration with partners in the project:
Celina Schulze obtained her Master of Science in Physics from Freie Universität Berlin in 2016. Her master thesis was on structural investigations of III-V semiconductor thin films grown on GaP/Si(001). She is currently working on the analysis of structural and electronic properties of In2O3 and Ga2O3 surfaces, using mainly scanning tunneling microscopy and spectroscopy methods. Apart from the investigations on clean surfaces, the work will also look at the influence of different adsorbates on the electronic structure.
If you have queries about the project, please contact the PI:
Holger Eisele, Technische Universität Berlin
The Leibniz ScienceCampus GraFOx is a network of two Leibniz Institutes, two universities and one institute of the Max Planck Society. It is based in Berlin, Germany.
Paul-Drude Institut für Festkörperelektronik (PDI)
Leibniz-Institut im Forschungsverbund Berlin e.V.
Tel.: +49 30 20377-342
Prof. Dr. Henning Riechert, PDI
Dr. Oliver Bierwagen, PDI
Dr. Martin Albrecht, IKZ