Gallium oxide is a promising semiconducting material for various applications in devices. It is transparent even to the UV light due to its wide optical band gap of around 4.9 eV, which gives it the potential of application in UV devices, high power field emission transistors (FET), and also transparent contacts when doped. Under ambient conditions, monoclinic β-phase is thermodynamically more stable than the other four phases. In the plasma-assisted MBE growth of gallium oxide, rotational domains of β-phase are observed on c-plane sapphire substrates with a thin (3 ML) α-phase in between. To make use of either α- and/or β-phase gallium oxide in devices, a detailed study of the underlying growth mechanisms is necessary. An in-situ x-ray diffraction study will be performed during the epitaxial growth of the gallium oxide on different substrates. With this setup, installed at BESSYII (Helmholtz-Zentrum Berlin), we are able to monitor the growth layer-by-layer and probe the structural evolution and strain dynamics in thin film. This integral method strongly requires a high structural quality of the layers as provided by MBE. To get started we ex-situ probe (optimized) epitaxial oxide layers grown at PDI’s MBE lab. All these investigations are accompanied by kinematic scattering simulations.
Major accomplishments expected:
Collaboration with partners in the project:
Zongzhe Cheng joins GraFOx from China. After his bachelor study, he came to Ulm, Germany, and finished his master study on the topic of semi-polar GaN. At PDI, he works with the in-situ and operando synchrotron based xrd study of group III sesquioxides MBE growth.
If you have queries about the project, please contact the PI:
Michael Hanke, Paul-Drude-Institut
Leibniz-Insitut im Forschungsverbund Berlin e.V.
10117 Berlin, Germany
The Leibniz ScienceCampus GraFOx is a network of two Leibniz institutes, two universities and one institute of the Max Planck Society. The Network is based in Berlin, Germany.