The project focuses on both transport and device issues in heterostructures and thin films based on semiconducting group III-sesquioxides. The research topics are defect investigation through low-frequency deep-level noise spectroscopy (DLNS), heterojunction characterization through C–V and I–V, and charge transport at device-relevant electric field strengths using I–V and Hall (including gated Hall). An associated effort in structure fabrication, including the technical steps such as contacts and structuring, is required, as well as the characterization of functional structures.
Note: An associated project requiring an additional student will on device aspects. FET devices are characterized and modeled using established heterostructure transistor models similar to what the group has used for III-V systems. The device performance is investigated by noise spectroscopy and the relationship between transport and device characteristics are investigated.
Major accomplishments expected:
Characterization of mid-gap defects as a function of growth conditions and their influence on the scattering and mobility.
Collaboration with partners in the project:
PDI, IKZ (Cluster 3: Growth)
Christian Golz is from Berlin and did his Bachelor and Master in Physics at Humboldt-Universität zu Berlin, focussing on III-V semiconductor nanostructure heterostructures. His PhD thesis is on electronic transport and trap states in epitaxial films, bulk materials, and heterostructures based on semiconducting group III-sesquioxides as well as the application to devices.
If you have queries about the project, please contact the PI:
Ted Masselink, Humboldt-Universität zu Berlin
The Leibniz ScienceCampus GraFOx is a network of two Leibniz Institutes, two universities and one institute of the Max Planck Society. It is based in Berlin, Germany.
Paul-Drude Institut für Festkörperelektronik (PDI)
Leibniz-Institut im Forschungsverbund Berlin e.V.
Tel.: +49 30 20377-342
Prof. Dr. Henning Riechert, PDI
Dr. Oliver Bierwagen, PDI
Dr. Martin Albrecht, IKZ