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GraFOx Publications



24Author M. Baldini, Z. Galazka, G. Wagner
  TitleRecent progress in the growth of β-Ga2O3 for power electronics applications
 Journal Materials Science in Semiconductor Processing 78, 132–146 (2018).
23Author M. Budde, C. Tschammer, P. Franz, J. Feldl, M. Ramsteiner, R. Goldhahn, M. Feneberg, N. Barsan, A. Oprea, and O. Bierwagen
  TitleStructural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
 Journal J. Appl. Phys. 123, 195301 (2018).
22Author Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, and M. Bickermann
  TitleDoping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
 Journal Journal of Crystal Growth 486, 82 (2018).
21Author S. Kokott, S.V. Levchenko, P. Rinke, and M. Scheffler
  TitleFirst-principles supercell calculations of small polarons with proper account for long-range polarization effects
 Journal New J. Phys. 20, 033023 (2018).
20Author J. Hidde, C. Guguschev, S. Ganschow, and D. Klimm
  TitleThermal conductivity of rare-earth scandates in comparison to other oxidic substrate crystals
 Journal Journal of Alloys and Compounds 738, 415–421 (2018).
19Author O. Bierwagen, Z. Galazka
 TitleThe inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications
 Journal Appl. Phys. Lett. 112, 092105 (2018)
18Author A. Papadogianni, L. Kirste, O. Bierwagen
  TitleStructural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors
 Journal Appl. Phys. Lett. 111, 262103 (2017).
17Author P. Vogt, O. Brandt, H. Riechert, J. Lähnemann, O. Bierwagen
  TitleMetal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
 Journal Phys. Rev. Lett. 119, 196001 (2017).
16Author A. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, and K. Irmscher
  TitleInfluence of incoherent twin boundaries on the electrical properties of β−Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
 Journal J. Appl. Phys. 122, 165701 (2017).
15Author Z. Cheng, M. Hanke, P. Vogt, O. Bierwagen, and A. Trampert
  TitlePhase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction
 Journal Appl. Phys. Lett. 111, 162104 (2017).
14Author M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, and G. Wagner
  TitleSi- and Sn-doped homoepitaxial beta-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
 Journal ECS Journal of Solid State Science and Technology 6, Q3040 (2017).
13Author C. Guguschev, D.J. Kok, U. Juda, R. Uecker, S. Sintonen, Z. Galazka, M. Bickermann
 TitleTop-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
 Journal J. Crystal Growth 468, 305-310 (2017)
12Author D. Klimm, C. Guguschev, D.J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M.D. Neumann, A. Kwasniewski, D.G. Schlom, and M. Bickermann
  TitleCrystal growth and characterization of the pyrochlore Tb2Ti2O7
 Journal CrystEngComm 19, 3908–3914 (2017).
11Author M. Schmidbauer, M. Hanke, A. Kwasniewski, D. Braun, L. von Helden, C. Feldt, S. J. Leake, and J. Schwarzkopf
 Title Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3
 Journal Journal of Applied Crystallography 50, 519 (2017).
10Author C. Vorwerk, C. Cocchi, and C. Draxl
 TitleAddressing electron-hole correlation in core excitations of solids: An all-electron many-body approach from first principles
 Journal Phys. Rev. B 95, 155121 (2017)
9Author C. Guguschev, J. Philippen, D.J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram, and M. Bickermann
  TitleCzochralski growth and characterization of cerium doped calcium scandate
 Journal CrystEngComm 19, 2553–2560 (2017).
8Author W. Miller, K. Böttcher, Z. Galazka, and J. Schreuer
  Title Numerical modelling of the Czochralski growth of β-Ga2O3
 Journal Crystals 7, xxx (2017).
7Author R. Uecker, R. Bertram, M. Brützam, Z. Galazka, T. M. Gesing, C. Guguschev, D. Klimm, M. Klupsch, A. Kwasniewski, and D. G. Schlom
 Title Large lattice-parameter Perovskite single-crystal substrates
 Journal Journal of Crystal Growth 457, 137 (2017).
6Author R. Schewski, M. Baldini, K. Irmscher, A. Fiedler, T. Markurt, B. Neuschulz, T. Remmele, T. Schulz, G. Wagner, Z. Galazka, M. Albrecht
 TitleEvolution of planar defects during homoepitaxial growth of ß-Ga2O3 layers on (100) substrates - a quantitative model
 Journal J. Appl. Phys. 120, (2016)
5Author Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann
 TitleMelt growth and properties of bulk BaSnO3 single crystals
 Journal Journal of Physics: Condensed Matter 29, 075701 (2017)
 DOI 10.1088/1361-648x/aa50e2
4Author Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, and M. Bickermann
 Title Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method
 Journal ECS Journal of Solid State Science and Technology 6, Q3007 Q3011 (2016).
3Author C. Cocchi, H. Zschiesche, D. Nabok, A. Mogilatenko, M. Albrecht, Z. Galazka, H. Kirmse, C. Draxl, and C. T. Koch
  TitleAtomic signatures of local environment from core-level spectroscopy in β-Ga2O3
 Journal Phys. Rev. B 94, 075147 (2016).
2Author P. Vogt and O. Bierwagen
 Title Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy
 Journal Appl. Phys. Lett. 109, 062103 (2016)
1Author P. Vogt and O. Bierwagen
 Title Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3
 Journal APL Mater. 4, 086112, (2016)


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The Leibniz ScienceCampus GraFOx is a network of two Leibniz Institutes, two universities and one institute of the Max Planck Society. It is based in Berlin, Germany.


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Dr. Oliver Bierwagen, PDI
Dr. Martin Albrecht, IKZ