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Publications with GraFOx contribution

 

 

14Author  A. Schleife, M.D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, and M. Feneberg
 TitleOptical properties of In2O3 from experiment and first principles theory: Influence of lattice screening
 Journal New J. Phys. 20, 053016 (2018).
 DOIhttps://doi.org/10.1088/1367-2630/aabeb0
13Author  J.-Y. Zhang, W. Li, R. L. Z. Hoye, J. MacManus-Driscoll, M. Budde, O. Bierwagen, L. Wang, Y. Du, M. Wahila, L.F. Piper, T.-L. Lee, H. Edwards, V.R. Dhanak, and H. Zhang
 TitleElectronic and transport properties of Li-doped NiO epitaxial thin films
 Journal J. Mater. Chem. C 6, 2275-2282 (2018).
 DOIhttps://doi.org/10.1039/C7TC05331B
12Author  T. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, H. Yoshikawa, Y. Yamashita, and T. Chikyow
 TitlePhotoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals
 Journal Applied Physics Express 10, 011102 (2017).
 DOIhttps://doi.org/10.7567/APEX.10.011102
11Author  T. Berthold, S. Katzer, J. Rombach, S. Krischok, O. Bierwagen, and M. Himmerlich
 TitleTowards Understanding the Cross-Sensitivity of In2O3 Based Ozone Sensors: Effects of O3, O2 and H2O Adsorption at In2O3(111) Surfaces
 Journal Phys.Status Solidi B tbh 255, 1700324 (2018).
 DOIhttps://doi.org/10.1002/pssb.201700324
10Author  D. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, and G. Tränkle
 TitleMOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
 Journal Journal of Crystal Growth 478, 212 (2017).
 DOIhttps://doi.org/10.1016/j.jcrysgro.2017.08.023
9Author  A. V. Singh, B. Khodadadi, J. B. Mohammadi, S. Keshavarz, T. Mewes, D. S. Negi, R. Dalta, Z. Galazka, R. Uecker, A. Gupta
 TitleBulk Single Crystal-Like Structural and Magnetic Characteristics of Epitaxial Spinel Ferrite Thin Films with Elimination of Antiphase Boundaries
 Journal Advanced Materials 1701222 (2017).
 DOIhttp://dx.doi.org/10.1002/adma.201701222
8Author  D. Szalkai, Z. Galazka, K. Irmscher, P. Tüttő, A. Klix, and D. Gehre
 Titleβ-Ga2O3 solid state devices for fast neutron detection
 Journal IEEE Transaction on Nuclear Science 64, 1574 (2017).
 DOIhttps://doi.org/10.1109/TNS.2017.2698831
7Author  B. Cai, J. Schwarzkopf, C. Feldt, J. Sellmann, T. Markurt, and R. Wördenweber
 TitleCombined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3
 Journal Phys. Rev. B 95, 184108 (2017).
 DOIhttps://doi.org/10.1103/PhysRevB.95.184108
6Author  A.J. Green, K.D. Chabak, M. Baldini, N.l Moser, R.C. Fitch, G. Wagner, Z .Galazka, J. McCandless, A. Crespo, K. Leedy, and G.H. Jessen
 Titleβ-Ga2O3 MOSFETs for Radio Frequency Operation
 Journal IEEE Electron Device Letters 38, 790–793 (2017).
 DOIhttps://doi.org/10.1109/LED.2017.2694805
5Author  T. Berthold, J. Rombach, T. Stauden, V. Polyakov, V. Cimalla, S. Krischok, O. Bierwagen, and M. Himmerlich
 TitleConsequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
 Journal J. Appl. Phys. 120, 245301 (2016).
 DOIhttps://doi.org/10.1063/1.4972474
4Author  D. Chabak, N. Moser, A. J. Green, D. E. Walker, S. E. Tetlak, E. Heller, A.Crespo, R.‑Fitch, J. P. McCandless, K. Leedy, M. Baldini, G. Wagner, Z. Galazka, X. Li, and G. Jessen
 TitleEnhancement-mode Ga2O3 wrap-gate fin field effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
 Journal Appl. Phys. Lett. 109, 213501 (2016).
 DOIhttps://doi.org/10.1063/1.4967931
3Author  J. Haeberle, S. Brizzi, D. Gaspar, P. Barquinha, Z. Galazka, D. Schulz, and D. Schmeißer
 TitleA spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals
 Journal Materials Research Express 3, 106302 (2016).
 DOIhttps://doi.org/10.1088/2053-1591/3/10/106302
2Author  T. C. Kaspar, P. V. Sushko, M. E. Bowden, S. M. Heald, A. Papadogianni, C. Tschammer, O. Bierwagen, and S. A. Chambers
 TitleDefect compensation by Cr vacancies and O interstitials in Ti4+-doped Cr2O3 epitaxial thin films
 Journal Phys. Rev. B 94, 155409 (2016).
 DOIhttps://doi.org/10.1103/PhysRevB.94.155409
1Author  A. J. Green, K. D. Chabak, E. R. Heller, R. C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S. E. Tetlak, A. Crespo, K. Leedy, and G. H. Jessen
 Title3.8-MV/cm breakdown strength of MOVPE-grown Sn- doped β-Ga2O3 MOSFETS
 Journal IEEE Electron Device Letters 37, 902 (2016).
 DOIhttps://doi.org/10.1109/LED.2016.2568139

 

Logo Leibniz-Gemeinschaft

The Leibniz ScienceCampus GraFOx is a network of two Leibniz Institutes, two universities and one institute of the Max Planck Society. It is based in Berlin, Germany.

 

Imprint | Data Protection

Coordinator:

Kai Hablizel

Paul-Drude Institut für Festkörperelektronik (PDI)
Leibniz-Institut im Forschungsverbund Berlin e.V.
Tel.: +49 30 20377-342
Email: hablizel@pdi-berlin.de

 

 

Speaker:

Prof. Dr. Henning Riechert, PDI

Scientific Coordinator:

Dr. Oliver Bierwagen, PDI
Dr. Martin Albrecht, IKZ