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GraFOx Publications

 

 

49Author C. Sutton, L. M. Ghiringhelli, T. Yamamoto, Y. Lysogorskiy, L. Blumenthal, T. Hammerschmidt, J. R. Golebiowski, X. Liu, A. Ziletti, and M. Scheffler
  TitleCrowd-sourcing materials-science challenges with the NOMAD 2018 Kaggle competition
 Journal npj Computational Materials 5, 111 (2019).
 DOI https://doi.org/10.1038/s41524-019-0239-3
48Author C. Guguschev, D. Klimm, M. Brützam, T. M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V. J. Fratello, D. G. Schlom
  TitleSingle crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films
 Journal J. Crystal Growth 528, 125263 (2019).
 DOI https://doi.org/10.1016/j.jcrysgro.2019.125263
47Author D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, and D. G. Schlom
  TitleREScO3 Substrates – Purveyors of Strain Engineering
 Journal Cryst. Res. Technol. 1900111 (2019).
 DOI https://doi.org/10.1002/crat.201900111
46Author C. Golz, F. Hatami, Z. Galazka, A. Popp, S.B. Anooz, G. Wagner, and W. T. Masselink
  TitleDeep-level noise characterization of MOVPE-grown ß-Ga2O3
 Journal Appl. Phys. Lett. 115, 133504 (2019).
 DOI https://doi.org/10.1063/1.5098994
45Author C. Vorwerk, B. Aurich, C. Cocchi, and C. Draxl
  TitleBethe-Salpeter equation for absorption and scattering spectroscopy: Implementation in the exciting code
 Journal Electronic Structure 1, 037001 (2019).
 DOI https://iopscience.iop.org/article/10.1088/2516-1075/ab3123/meta
44Author R. Ahrling, J. Boy, M. Handwerg, O. Chiatti, R. Mitdank, G. Wagner, Z. Galazka, and S. F. Fischer
  TitleTransport properties and finite size effects in ß-Ga2O3 thin films
 Journal Sci. Rep. 9, 13149 (2019).
 DOI https://doi.org/10.1038/s41598-019-49238-2
43Author M. Feneberg, J. Bläsing, T. Sekiyama, K. Ota, K. Akaiwa, K. Ichino, and R. Goldhahn
  TitleAnisotropic phonon properties and effective electron mass in α-Ga2O3
 Journal Appl. Phys. Lett 114, 142102 (2019).
 DOI https://doi.org/10.1063/1.5086731
42Author S. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Ablbrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka and G. Wagner
  TitleIndium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy
 Journal J. Appl. Phys. 125, 195702 (2019).
 DOI https://doi.org/10.1063/1.5090213
41Author J. Hidde, C. Guguschev, and D. Klimm
  TitleThermal analysis and crystal growth of doped Nb2O5
 Journal J. Crystal Growth 509, 60-65 (2019).
 DOI https://doi.org/10.1016/j.jcrysgro.2018.12.035
40Author T. Hirsch, C. Guguschev, A. Kwasniewski, S. Ganschow, and D. Klimm
  TitleInvestigation of the Nd2O3–Lu2O3–Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1−xScxO3
 Journal J. Crystal Growth 505, 38-43 (2019).
 DOI https://doi.org/10.1016/j.jcrysgro.2018.10.003
39Author Z. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, T. Schröder, and M. Bickermann
  TitleUltra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
 Journal APL Materials 7, 022512 (2019).
 DOIhttps://doi.org/10.1063/1.5053867
38Author A. Fiedler, R. Schewski, Z. Galazka, and K. Irmscher
  TitleStatic Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)
 Journal ECS J. Solid State Sci. Technol. 8, Q3083 (2019).
 DOIhttps://doi.org/10.1149/2.0201907jss
37Author C. Bartel, C. Sutton, B.R. Goldsmith, R. Ouyang, C.B. Musgrave, L.M. Ghiringhelli, and M. Scheffler
  TitleNew Tolerance Factor to Predict the Stability of Perovskite Oxides and Halides
 Journal Science Advances 5, eaav0693 (2019).
 DOIhttps://doi.org/10.1126/sciadv.aav0693
36Author J. Boy, M. Handwerg, R. Ahrling, R. Mitdank, G. Wagner, Z. Galazka, and S. Fischer
  TitleTemperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films
 Journal APL Materials 7, 022526 (2019).
 DOIhttps://doi.org/10.1063/1.5084791
35Author R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S.V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht
  TitleStep-flow growth in homoepitaxy of β-Ga2O3 (100) – the influence of the miscut direction and faceting
 Journal APL Materials 7, 022515 (2019).
 DOIhttps://doi.org/10.1063/1.5054943
34Author P. Mazzolini, P. Vogt, R. Schewski, C. Wouters, M. Albrecht, and O. Bierwagen
  TitleFaceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
 Journal APL Materials 7, 022511 (2019).
 DOIhttps://doi.org/10.1063/1.5054386
33Author J. E. Boschker, T. Markurt, M. Albrecht, and J. Schwarzkopf
  TitleHeteroepitaxial Growth of T-Nb2O5 on SrTiO3
 Journal Nanomaterials 8, 895 (2018).
 DOIhttps://doi.org/10.3390/nano8110895
32Author C. Guguschev, J. Hidde, T. M. Gesing, M. Gogolin, and D. Klimm
  TitleCzochralski growth and characterization of TbxGd1-xScO3 and TbxDy1−xScO3 solid-solution single crystals
 Journal CrystEngComm. 20, 2868-2876 (2018).
 DOIhttps://doi.org/10.1039/C8CE00335A
31Author M. Feneberg, J. Nixdorf, M. D. Neumann, N. Esser, L. Artús, R. Cuscó, T. Yamaguchi, and R. Goldhahn
  TitleOrdinary dielectric function of corundumlike α-Ga2O3 from 40 meV to 20 eV
 Journal Phys. Rev. Mat. 2, 044601 (2018).
 DOIhttps://doi.org/10.1103/PhysRevMaterials.2.044601
30 Author Z. Galazka
  Title β-Ga2O3 for wide-bandgap electronics and optoelectronics
  Journal Semicond. Sci. Technol. 33, 113001 (2018).
  DOI https://doi.org/10.1088/1361-6641/aadf78
29 Author B. Thielert, C. Janowitz, Z. Galazka, and M. Mulazzi
  Title Theoretical and experimental investigation of the electronic properties of the wide band-gap transparent semiconductor MgGa2O4
  Journal Phys. Rev. B 97, 235309 (2018).
  DOI https://doi.org/10.1103/PhysRevB.97.235309
28 Author Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert
  Title Thermal expansion of single-crystalline β-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction
  Journal Applied Physical Letters 113, 182102 (2018).
  DOI https://doi.org/10.1063/1.5054265
27Author Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert
  Title Growth mode evolution during (100)-oriented β-Ga2O3 homoepitaxy
 Journal Nanotechnology 29, 395705 (2018).
 DOIhttp://dx.doi.org/10.1088/1361-6528/aad21b
26Author P. Vogt and O. Bierwagen
  TitleQuantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2
 Journal Physical Review Materials 2, 120401(R) (2018).
 DOIhttp://dx.doi.org/10.1103/PhysRevMaterials.2.120401
25Author M. Baldini, Z. Galazka, and G. Wagner
  TitleRecent progress in the growth of β-Ga2O3 for power electronics applications
 Journal Materials Science in Semiconductor Processing 78, 132–146 (2018).
 DOIhttps://doi.org/10.1016/j.mssp.2017.10.040
24Author M. Budde, C. Tschammer, P. Franz, J. Feldl, M. Ramsteiner, R. Goldhahn, M. Feneberg, N. Barsan, A. Oprea, and O. Bierwagen
  TitleStructural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
 Journal J. Appl. Phys. 123, 195301 (2018).
 DOIhttps://doi.org/10.1063/1.5026738
23Author Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, and M. Bickermann
  TitleDoping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
 Journal Journal of Crystal Growth 486, 82 (2018).
 DOIhttps://doi.org/10.1016/j.jcrysgro.2018.01.022
22Author S. Kokott, S.V. Levchenko, P. Rinke, and M. Scheffler
  TitleFirst-principles supercell calculations of small polarons with proper account for long-range polarization effects
 Journal New J. Phys. 20, 033023 (2018).
 DOIhttps://doi.org/10.1088/1367-2630/aaaf44
21Author J. Hidde, C. Guguschev, S. Ganschow, and D. Klimm
  TitleThermal conductivity of rare-earth scandates in comparison to other oxidic substrate crystals
 Journal Journal of Alloys and Compounds 738, 415–421 (2018).
 DOIhttps://doi.org/10.1016/j.jallcom.2017.12.172
20Author O. Bierwagen, Z. Galazka
 TitleThe inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications
 Journal Appl. Phys. Lett. 112, 092105 (2018).
 DOIhttps://doi.org/10.1063/1.5018983
19Author A. Papadogianni, L. Kirste, O. Bierwagen
  TitleStructural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors
 Journal Appl. Phys. Lett. 111, 262103 (2017).
 DOIhttps://doi.org/10.1063/1.5006421
18Author P. Vogt, O. Brandt, H. Riechert, J. Lähnemann, O. Bierwagen
  TitleMetal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
 Journal Phys. Rev. Lett. 119, 196001 (2017).
 DOIhttps://doi.org/10.1103/PhysRevLett.119.196001
17Author A. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, and K. Irmscher
  TitleInfluence of incoherent twin boundaries on the electrical properties of β−Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
 Journal J. Appl. Phys. 122, 165701 (2017).
 DOIhttp://dx.doi.org/10.1063/1.4993748
16Author Z. Cheng, M. Hanke, P. Vogt, O. Bierwagen, and A. Trampert
  TitlePhase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction
 Journal Appl. Phys. Lett. 111, 162104 (2017).
 DOIhttps://doi.org/10.1063/1.4998804
15Author M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, and G. Wagner
  TitleSi- and Sn-doped homoepitaxial beta-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
 Journal ECS Journal of Solid State Science and Technology 6, Q3040 (2017).
 DOIhttps://doi.org/10.1149/2.0081702jss
14Author C. Guguschev, D.J. Kok, U. Juda, R. Uecker, S. Sintonen, Z. Galazka, M. Bickermann
 TitleTop-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
 Journal J. Crystal Growth 468, 305-310 (2017).
 DOIhttps://doi.org/10.1016/j.jcrysgro.2016.10.048
13Author D. Klimm, C. Guguschev, D.J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M.D. Neumann, A. Kwasniewski, D.G. Schlom, and M. Bickermann
  TitleCrystal growth and characterization of the pyrochlore Tb2Ti2O7
 Journal CrystEngComm 19, 3908–3914 (2017).
 DOIhttps://doi.org/10.1039/C7CE00942A
12Author M. Schmidbauer, M. Hanke, A. Kwasniewski, D. Braun, L. von Helden, C. Feldt, S. J. Leake, and J. Schwarzkopf
 Title Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3
 Journal Journal of Applied Crystallography 50, 519 (2017).
 DOIhttps://doi.org/10.1107/S1600576717000905
11Author C. Vorwerk, C. Cocchi, and C. Draxl
 TitleAddressing electron-hole correlation in core excitations of solids: An all-electron many-body approach from first principles
 Journal Phys. Rev. B 95, 155121 (2017).
 DOIhttps://doi.org/10.1103/PhysRevB.95.155121
10Author C. Guguschev, J. Philippen, D.J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram, and M. Bickermann
  TitleCzochralski growth and characterization of cerium doped calcium scandate
 Journal CrystEngComm 19, 2553–2560 (2017).
 DOIhttps://doi.org/10.1039/C7CE00445A
9Author W. Miller, K. Böttcher, Z. Galazka, and J. Schreuer
  Title Numerical modelling of the Czochralski growth of β-Ga2O3
 Journal Crystals 7, xxx (2017).
 DOIhttps://doi.org/10.3390/cryst7010026
8Author R. Uecker, R. Bertram, M. Brützam, Z. Galazka, T. M. Gesing, C. Guguschev, D. Klimm, M. Klupsch, A. Kwasniewski, and D. G. Schlom
 Title Large lattice-parameter Perovskite single-crystal substrates
 Journal Journal of Crystal Growth 457, 137 (2017).
 DOIhttps://doi.org/10.1016/j.jcrysgro.2016.03.014
7Author Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann
 TitleMelt growth and properties of bulk BaSnO3 single crystals
 Journal Journal of Physics: Condensed Matter 29, 075701 (2017).
 DOIhttps://doi.org/10.1088/1361-648x/aa50e2
6Author M. Handwerg, R. Mitdank, Z. Galazka, and S. F. Fischer
 TitleTemperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating  ß-Ga2O3 single crystal along [100], [010] and [001]
 Journal Semicond. Sci. Technol. 31, 125006 (2016).
 DOIhttps://doi.org/10.1088/0268-1242/31/12/125006
5 Author R. Schewski, M. Baldini, K. Irmscher, A. Fiedler, T. Markurt, B. Neuschulz, T. Remmele, T. Schulz, G. Wagner, Z. Galazka, M. Albrecht
  Title Evolution of planar defects during homoepitaxial growth of ß-Ga2O3 layers on (100) substrates - a quantitative model
  Journal J. Appl. Phys. 120, (2016).
  DOI https://doi.org/10.1063/1.4971957
4Author Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, and M. Bickermann
 Title Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method
 Journal ECS Journal of Solid State Science and Technology 6, Q3007 Q3011 (2016).
 DOIhttps://doi.org/10.1149/2.0021702jss
3Author C. Cocchi, H. Zschiesche, D. Nabok, A. Mogilatenko, M. Albrecht, Z. Galazka, H. Kirmse, C. Draxl, and C. T. Koch
  TitleAtomic signatures of local environment from core-level spectroscopy in β-Ga2O3
 Journal Phys. Rev. B 94, 075147 (2016).
 DOIhttps://doi.org/10.1103/PhysRevB.94.075147
2Author P. Vogt and O. Bierwagen
 Title Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy
 Journal Appl. Phys. Lett. 109, 062103 (2016).
 DOIhttps://doi.org/10.1063/1.4960633
1Author P. Vogt and O. Bierwagen
 Title Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3
 Journal APL Mater. 4, 086112, (2016).
 DOIhttps://doi.org/10.1063/1.4961513

 

Logo Leibniz-Gemeinschaft

The Leibniz ScienceCampus GraFOx is a network of two Leibniz Institutes, two universities and one institute of the Max Planck Society. It is based in Berlin, Germany.

 

Imprint | Data Protection

Coordinator:

Kai Hablizel

Paul-Drude Institut für Festkörperelektronik (PDI)
Leibniz-Institut im Forschungsverbund Berlin e.V.
Tel.: +49 30 20377-342
Email: grafox@pdi-berlin.de

 

 

Speaker:

Prof. Dr. Henning Riechert, PDI

Scientific Coordinator:

Dr. Oliver Bierwagen, PDI
Dr. Martin Albrecht, IKZ