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Publications with GraFOx contribution

 

 

27Author  V. Jovic, S. Moser, A. Papadogianni, R.J. Koch, A. Rossi, C. Jozwiak, A. Bostwick, E. Rotenberg, J. V. Kennedy, O. Bierwagen, and K. E. Smith
 TitleThe Itinerant 2D Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications
 Journal Small, (2019).
 DOIhttps://doi.org/10.1002/smll.201903321
26Author  C.E. Simion, F. Schipani, A. Papadogianni, A. Stanoiu, M. Budde, A. Oprea, U. Weimar, O. Bierwagen, and N. Barsan
 TitleConductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101)
 Journal ACS Sensors 4, 2420 (2019).
 DOIhttps://doi.org/10.1021/acssensors.9b01018
25Author  J. Michel, D. Splith, J. Rombach, A. Papadogianni, T. Berthold, S. Krischok, M. Grundmann, O. Bierwagen, H. von Wenckstern, and M. Himmerlich
 TitleProcessing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3
 Journal ACS Appl. Mater. Interfaces 11, 27073 (2019).
 DOIhttps://doi.org/10.1021/acsami.9b06455
24Author  T. Nagata, O. Bierwagen, Z. Galazka, S. Ueda, M. Imura, Y. Yamashita, and T. Chikyow
 TitlePhotoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals
 Journal Jpn. J. Appl. Phys. 58, 080903 (2019).
 DOIhttps://doi.org/10.7567/1347-4065/ab2c1e
23Author  A. Grillo, J. Barrat, Z. Galazka, M. Passacantando, F. Giubileo, L. Iemmo, G. Luongo, F. Urban, C. Dubourdieu, and A. Di Bartolomeo
 TitleHigh field-emission current density from β-Ga2O3 nanopillars
 Journal Appl. Phys. Lett. 114, 193191 (2019).
 DOIhttps://doi.org/10.1063/1.5096596
22Author  W.-C. Lee, M. J. Wahila, S. Mukherjee, C. N. Singh, T. Eustance, A. Regoutz, H. Paik, J. E. Boschker, F. Rodolakis, T.-L. Lee, D. G. Schlom, and L. F. J. Piper
 TitleCooperative effects of strain and electron correlation in epitaxial VO2 and NbO2
 Journal J. Appl. Phys. 125, 082539 (2019).
 DOIhttps://doi.org/10.1063/1.5052636
21Author  M. Mulazzi, F. Reichmann, A. Becker, W.M. Klesse, P. Alippi, V. Fiorentini, V. A. Parisini, A. M. Bosi, and R. Fornari
 TitleThe electronic structure of epsilon-Ga2O3
 Journal APL Materials 7, 022522 (2019).
 DOIhttps://doi.org/10.1063/1.5054395
20Author  M. Feneberg, C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn
 TitleAnisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift
 Journal APL Materials 7, 022508 (2019).
 DOIhttps://doi.org/10.1063/1.5054351
19Author  C. Hirschle, J. Schreuer, and Z. Galazka
 TitleInterplay of cation ordering and thermoelastic properties of spinel structure MgGa2O4
 Journal J. Appl. Phys. 124, 065111 (2018).
 DOIhttps://doi.org/10.1103/PhysRevApplied.10.024047
18Author  K. Tetzner, A. Thies, E. Bahat Treidel, F. Brunner, G. Wagner, and J. Würfl
 TitleSelective area isolation of beta-Ga2O3 using multiple energy nitrogen ion implantation
 Journal JAppl. Phys. Lett. 113, 172104 (2018).
 DOIhttps://doi.org/10.1063/1.5046139
17 Author  M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, and M. Eickhoff
  Title Anisotropic Optical Properties of Metastable (01-12) alpha-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy
  Journal Physical Review Applied 10, 024047 (2018).
  DOI https://doi.org/10.1103/PhysRevApplied.10.024047
16Author  A. Schleife, M.D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, and M. Feneberg
 TitleOptical properties of In2O3 from experiment and first principles theory: Influence of lattice screening
 Journal New J. Phys. 20, 053016 (2018).
 DOIhttps://doi.org/10.1088/1367-2630/aabeb0
15Author  J.-Y. Zhang, W. Li, R. L. Z. Hoye, J. MacManus-Driscoll, M. Budde, O. Bierwagen, L. Wang, Y. Du, M. Wahila, L.F. Piper, T.-L. Lee, H. Edwards, V.R. Dhanak, and H. Zhang
 TitleElectronic and transport properties of Li-doped NiO epitaxial thin films
 Journal J. Mater. Chem. C 6, 2275-2282 (2018).
 DOIhttps://doi.org/10.1039/C7TC05331B
14Author  T. Berthold, S. Katzer, J. Rombach, S. Krischok, O. Bierwagen, and M. Himmerlich
 TitleTowards Understanding the Cross-Sensitivity of In2O3 Based Ozone Sensors: Effects of O3, O2 and H2O Adsorption at In2O3(111) Surfaces
 Journal Phys.Status Solidi B tbh 255, 1700324 (2018).
 DOIhttps://doi.org/10.1002/pssb.201700324
13Author  A. Segura, L. Artús, R. Cuscó, R. Goldhahn, and M. Feneberg
 TitleBand gap of corundumlike α-Ga2O3 determined by absorption and ellipsometry
 Journal Phys. Rev. Mat. 1, 024604 (2017).
 DOIhttps://doi.org/10.1103/PhysRevMaterials.1.024604
12 Author  J. Philippen, C. Guguschev, and D. Klimm
  Title Single crystal fiber growth of cerium doped strontium yttrate, SrY2O4:Ce3+
  Journal Journal of Crystal Growth, Volume 459, 17–22 (2017).
  DOI https://doi.org/10.1016/j.jcrysgro.2016.11.033
11Author  T. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, H. Yoshikawa, Y. Yamashita, and T. Chikyow
 TitlePhotoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals
 Journal Applied Physics Express 10, 011102 (2017).
 DOIhttps://doi.org/10.7567/APEX.10.011102
10Author  D. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, and G. Tränkle
 TitleMOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
 Journal Journal of Crystal Growth 478, 212 (2017).
 DOIhttps://doi.org/10.1016/j.jcrysgro.2017.08.023
9Author  A. V. Singh, B. Khodadadi, J. B. Mohammadi, S. Keshavarz, T. Mewes, D. S. Negi, R. Dalta, Z. Galazka, R. Uecker, A. Gupta
 TitleBulk Single Crystal-Like Structural and Magnetic Characteristics of Epitaxial Spinel Ferrite Thin Films with Elimination of Antiphase Boundaries
 Journal Advanced Materials 1701222 (2017).
 DOIhttp://dx.doi.org/10.1002/adma.201701222
8Author  D. Szalkai, Z. Galazka, K. Irmscher, P. Tüttő, A. Klix, and D. Gehre
 Titleβ-Ga2O3 solid state devices for fast neutron detection
 Journal IEEE Transaction on Nuclear Science 64, 1574 (2017).
 DOIhttps://doi.org/10.1109/TNS.2017.2698831
7Author  B. Cai, J. Schwarzkopf, C. Feldt, J. Sellmann, T. Markurt, and R. Wördenweber
 TitleCombined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3
 Journal Phys. Rev. B 95, 184108 (2017).
 DOIhttps://doi.org/10.1103/PhysRevB.95.184108
6Author  A.J. Green, K.D. Chabak, M. Baldini, N.l Moser, R.C. Fitch, G. Wagner, Z .Galazka, J. McCandless, A. Crespo, K. Leedy, and G.H. Jessen
 Titleβ-Ga2O3 MOSFETs for Radio Frequency Operation
 Journal IEEE Electron Device Letters 38, 790–793 (2017).
 DOIhttps://doi.org/10.1109/LED.2017.2694805
5Author  T. Berthold, J. Rombach, T. Stauden, V. Polyakov, V. Cimalla, S. Krischok, O. Bierwagen, and M. Himmerlich
 TitleConsequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
 Journal J. Appl. Phys. 120, 245301 (2016).
 DOIhttps://doi.org/10.1063/1.4972474
4Author  D. Chabak, N. Moser, A. J. Green, D. E. Walker, S. E. Tetlak, E. Heller, A.Crespo, R.‑Fitch, J. P. McCandless, K. Leedy, M. Baldini, G. Wagner, Z. Galazka, X. Li, and G. Jessen
 TitleEnhancement-mode Ga2O3 wrap-gate fin field effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
 Journal Appl. Phys. Lett. 109, 213501 (2016).
 DOIhttps://doi.org/10.1063/1.4967931
3Author  J. Haeberle, S. Brizzi, D. Gaspar, P. Barquinha, Z. Galazka, D. Schulz, and D. Schmeißer
 TitleA spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals
 Journal Materials Research Express 3, 106302 (2016).
 DOIhttps://doi.org/10.1088/2053-1591/3/10/106302
2Author  T. C. Kaspar, P. V. Sushko, M. E. Bowden, S. M. Heald, A. Papadogianni, C. Tschammer, O. Bierwagen, and S. A. Chambers
 TitleDefect compensation by Cr vacancies and O interstitials in Ti4+-doped Cr2O3 epitaxial thin films
 Journal Phys. Rev. B 94, 155409 (2016).
 DOIhttps://doi.org/10.1103/PhysRevB.94.155409
1Author  A. J. Green, K. D. Chabak, E. R. Heller, R. C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S. E. Tetlak, A. Crespo, K. Leedy, and G. H. Jessen
 Title3.8-MV/cm breakdown strength of MOVPE-grown Sn- doped β-Ga2O3 MOSFETS
 Journal IEEE Electron Device Letters 37, 902 (2016).
 DOIhttps://doi.org/10.1109/LED.2016.2568139

 

Logo Leibniz-Gemeinschaft

The Leibniz ScienceCampus GraFOx is a network of two Leibniz Institutes, two universities and one institute of the Max Planck Society. It is based in Berlin, Germany.

 

Imprint | Data Protection

Coordinator:

Kai Hablizel

Paul-Drude Institut für Festkörperelektronik (PDI)
Leibniz-Institut im Forschungsverbund Berlin e.V.
Tel.: +49 30 20377-342
Email: grafox@pdi-berlin.de

 

 

Speaker:

Prof. Dr. Henning Riechert, PDI

Scientific Coordinator:

Dr. Oliver Bierwagen, PDI
Dr. Martin Albrecht, IKZ