Publications with GraFOx contribution

  1. Author J. Kamimura, M. Budde, P. Bogdanoff, C. Tschammer, F.F. Abdi, R. van de Krol, O. Bierwagen, H. Riechert, L. Geelhaar Title Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers Journal Solar RRL Volume 4, Issue 12 (2020) DOI https://doi.org/10.1002/solr.202000568
  2. Author J. E. N. Swallow, C. Vorwerk, P. Mazzolini, P. Vogt, O. Bierwagen, A. Karg, M. Eickhoff, J. Schörmann, M. R. Wagner, J. W. Roberts, P. R. Chalker, M. J. Smiles, P. Murgatroyd, S. A. Razek, Z. W. Lebens-Higgins, L. F. J. Piper, L. A. H. Jones, P. K. Thakur, T.-L. Lee, J. B. Varley, J. Furthmüller, C. Draxl, T. D. Veal, and A. Regoutz Title Influence of Polymorphism on the Electronic Structure of Ga2O3 Journal Chemistry of Materials 19, 8460 (2020) DOI https://doi.org/10.1021/acs.chemmater.0c02465
  3. Author S.S. Niavol, M. Budde, A. Papadogianni, M Heilmann, H. M. Moghaddam, C. M. Aldao, G. Ligorio, E. J.W.List-Kratochvil, J. M. J.Lopes, N. Barsan, O. Bierwagen, F. Schipani Title Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors Journal Sensors and Actuators B 325, 128797 (2020) DOI https://doi.org/10.1016/j.snb.2020.128797
  4. Author P. Ning, J. Grümbel, J. Bläsing, R. Goldhahn, D.-W. Jeon, M. Feneberg Title Lattice vibrations and optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy Journal Semicond. Sci. Technol. 35, 095001 (2020) DOI https://doi.org/10.1088/1361-6641/ab97f5
  5. Author M. Schubert, A. Mock, R. Korlacki, S. Knight, B. Monemar, K. Goto, Y. Kumagai, A. Kuramata, Z. Galazka, G. Wagner, M. J. Tadjer, V. D. Wheeler, M. Higashiwaki, V. Darakchieva Title Phonon and Free Charge Carrier Properties in Monoclinic-Symmetry β-Ga2O3 Journal Book chapter Springer Series in Material Science: Gallium Oxide - Phonon Properties SSMATERIALS volume 293, pp 501-534 DOI https://doi.org/10.1007/978-3-030-37153-1_28
  6. Author V. Jovic, S. Moser, A. Papadogianni, R.J. Koch, A. Rossi, C. Jozwiak, A. Bostwick, E. Rotenberg, J. V. Kennedy, O. Bierwagen, and K. E. Smith Title The Itinerant 2D Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications Journal Small, (2019). DOI https://doi.org/10.1002/smll.201903321
  7. Author C.E. Simion, F. Schipani, A. Papadogianni, A. Stanoiu, M. Budde, A. Oprea, U. Weimar, O. Bierwagen, and N. Barsan Title Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) Journal ACS Sensors 4, 2420 (2019). DOI https://doi.org/10.1021/acssensors.9b01018
  8. Author J. Michel, D. Splith, J. Rombach, A. Papadogianni, T. Berthold, S. Krischok, M. Grundmann, O. Bierwagen, H. von Wenckstern, and M. Himmerlich Title Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 Journal ACS Appl. Mater. Interfaces 11, 27073 (2019). DOI https://doi.org/10.1021/acsami.9b06455
  9. Author T. Nagata, O. Bierwagen, Z. Galazka, S. Ueda, M. Imura, Y. Yamashita, and T. Chikyow Title Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals Journal Jpn. J. Appl. Phys. 58, 080903 (2019). DOI https://doi.org/10.7567/1347-4065/ab2c1e
  10. Author A. Grillo, J. Barrat, Z. Galazka, M. Passacantando, F. Giubileo, L. Iemmo, G. Luongo, F. Urban, C. Dubourdieu, and A. Di Bartolomeo Title High field-emission current density from β-Ga2O3 nanopillars Journal Appl. Phys. Lett. 114, 193191 (2019). DOI https://doi.org/10.1063/1.5096596
  11. Author W.-C. Lee, M. J. Wahila, S. Mukherjee, C. N. Singh, T. Eustance, A. Regoutz, H. Paik, J. E. Boschker, F. Rodolakis, T.-L. Lee, D. G. Schlom, and L. F. J. Piper Title Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2 Journal J. Appl. Phys. 125, 082539 (2019). DOI https://doi.org/10.1063/1.5052636
  12. Author M. Mulazzi, F. Reichmann, A. Becker, W.M. Klesse, P. Alippi, V. Fiorentini, V. A. Parisini, A. M. Bosi, and R. Fornari Title The electronic structure of epsilon-Ga2O3 Journal APL Materials 7, 022522 (2019). DOI https://doi.org/10.1063/1.5054395
  13. Author M. Feneberg, C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn Title Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift Journal APL Materials 7, 022508 (2019). DOI https://doi.org/10.1063/1.5054351
  14. Author C. Hirschle, J. Schreuer, and Z. Galazka Title Interplay of cation ordering and thermoelastic properties of spinel structure MgGa2O4 Journal J. Appl. Phys. 124, 065111 (2018). DOI https://doi.org/10.1103/PhysRevApplied.10.024047
  15. Author K. Tetzner, A. Thies, E. Bahat Treidel, F. Brunner, G. Wagner, and J. Würfl Title Selective area isolation of beta-Ga2O3 using multiple energy nitrogen ion implantation Journal JAppl. Phys. Lett. 113, 172104 (2018). DOI https://doi.org/10.1063/1.5046139
  16. Author M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, and M. Eickhoff Title Anisotropic Optical Properties of Metastable (01-12) alpha-Ga2O3 Grown by Plasma-Assisted Molecular Beam Epitaxy Journal Physical Review Applied 10, 024047 (2018). DOI https://doi.org/10.1103/PhysRevApplied.10.024047
  17. Author A. Schleife, M.D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, and M. Feneberg Title Optical properties of In2O3 from experiment and first principles theory: Influence of lattice screening Journal New J. Phys. 20, 053016 (2018). DOI https://doi.org/10.1088/1367-2630/aabeb0
  18. Author J.-Y. Zhang, W. Li, R. L. Z. Hoye, J. MacManus-Driscoll, M. Budde, O. Bierwagen, L. Wang, Y. Du, M. Wahila, L.F. Piper, T.-L. Lee, H. Edwards, V.R. Dhanak, and H. Zhang Title Electronic and transport properties of Li-doped NiO epitaxial thin films Journal J. Mater. Chem. C 6, 2275-2282 (2018). DOI https://doi.org/10.1039/C7TC05331B
  19. Author T. Berthold, S. Katzer, J. Rombach, S. Krischok, O. Bierwagen, and M. Himmerlich Title Towards Understanding the Cross-Sensitivity of In2O3 Based Ozone Sensors: Effects of O3, O2 and H2O Adsorption at In2O3(111) Surfaces Journal Phys.Status Solidi B tbh 255, 1700324 (2018). DOI https://doi.org/10.1002/pssb.201700324
  20. Author A. Segura, L. Artús, R. Cuscó, R. Goldhahn, and M. Feneberg Title Band gap of corundumlike α-Ga2O3 determined by absorption and ellipsometry
    Journal Phys. Rev. Mat. 1, 024604 (2017). DOI https://doi.org/10.1103/PhysRevMaterials.1.024604
  21. Author J. Philippen, C. Guguschev, and D. Klimm Title Single crystal fiber growth of cerium doped strontium yttrate, SrY2O4:Ce3+ Journal Journal of Crystal Growth, Volume 459, 17–22 (2017). DOI https://doi.org/10.1016/j.jcrysgro.2016.11.033
  22. Author T. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, H. Yoshikawa, Y. Yamashita, and T. Chikyow Title Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals Journal Applied Physics Express 10, 011102 (2017). DOI https://doi.org/10.7567/APEX.10.011102
  23. Author D. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, and G. Tränkle Title MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates Journal Journal of Crystal Growth 478, 212 (2017). DOI https://doi.org/10.1016/j.jcrysgro.2017.08.023
  24. Author A. V. Singh, B. Khodadadi, J. B. Mohammadi, S. Keshavarz, T. Mewes, D. S. Negi, R. Dalta, Z. Galazka, R. Uecker, A. Gupta Title Bulk Single Crystal-Like Structural and Magnetic Characteristics of Epitaxial Spinel Ferrite Thin Films with Elimination of Antiphase Boundaries Journal Advanced Materials 1701222 (2017). DOI http://dx.doi.org/10.1002/adma.201701222
  25. Author D. Szalkai, Z. Galazka, K. Irmscher, P. Tüttő, A. Klix, and D. Gehre Title β-Ga2O3 solid state devices for fast neutron detection Journal IEEE Transaction on Nuclear Science 64, 1574 (2017). DOI https://doi.org/10.1109/TNS.2017.2698831
  26. Author B. Cai, J. Schwarzkopf, C. Feldt, J. Sellmann, T. Markurt, and R. Wördenweber Title Combined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3 Journal Phys. Rev. B 95, 184108 (2017). DOI https://doi.org/10.1103/PhysRevB.95.184108
  27. Author A.J. Green, K.D. Chabak, M. Baldini, N.l Moser, R.C. Fitch, G. Wagner, Z .Galazka, J. McCandless, A. Crespo, K. Leedy, and G.H. Jessen Title β-Ga2O3 MOSFETs for Radio Frequency Operation Journal IEEE Electron Device Letters 38, 790–793 (2017). DOI https://doi.org/10.1109/LED.2017.2694805
  28. Author T. Berthold, J. Rombach, T. Stauden, V. Polyakov, V. Cimalla, S. Krischok, O. Bierwagen, and M. Himmerlich Title Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces Journal J. Appl. Phys. 120, 245301 (2016). DOI https://doi.org/10.1063/1.4972474
  29. Author D. Chabak, N. Moser, A. J. Green, D. E. Walker, S. E. Tetlak, E. Heller, A.Crespo, R.‑Fitch, J. P. McCandless, K. Leedy, M. Baldini, G. Wagner, Z. Galazka, X. Li, and G. Jessen Title Enhancement-mode Ga2O3 wrap-gate fin field effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage Journal Appl. Phys. Lett. 109, 213501 (2016). DOI https://doi.org/10.1063/1.4967931
  30. Author J. Haeberle, S. Brizzi, D. Gaspar, P. Barquinha, Z. Galazka, D. Schulz, and D. Schmeißer Title A spectroscopic comparison of IGZO thin films and the parent In2O3, Ga2O3, and ZnO single crystals Journal Materials Research Express 3, 106302 (2016). DOI https://doi.org/10.1088/2053-1591/3/10/106302
  31. Author T. C. Kaspar, P. V. Sushko, M. E. Bowden, S. M. Heald, A. Papadogianni, C. Tschammer, O. Bierwagen, and S. A. Chambers Title Defect compensation by Cr vacancies and O interstitials in Ti4+-doped Cr2O3 epitaxial thin films Journal Phys. Rev. B 94, 155409 (2016). DOI https://doi.org/10.1103/PhysRevB.94.155409
  32. Author A. J. Green, K. D. Chabak, E. R. Heller, R. C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S. E. Tetlak, A. Crespo, K. Leedy, and G. H. Jessen Title 3.8-MV/cm breakdown strength of MOVPE-grown Sn- doped β-Ga2O3 MOSFETS Journal IEEE Electron Device Letters 37, 902 (2016). DOI https://doi.org/10.1109/LED.2016.2568139