GraFOx Publications

  1. Author H. Xu, R. Wu, J.-Y. Zhang, W. Han, L. Chen, X. Liang, C. Y. Haw, P. Mazzolini, O. Bierwagen, D.-C. Qi, and K. H. L. Zhang Title Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor Journal ACS Appl. Electron. Mater. xxx (2021) DOI https://doi.org/10.1021/acsaelm.1c00090
  2. Author B. M. Janzen, P. Mazzolini, R. Gillen, A. Falkenstein, M. Martin, H. Tornatzky, J. Maultzsch, O. Bierwagen, M. R. Wagner Title Isotopic study of Raman active phonon modes in β-Ga2O3 Journal J. Mater. Chem. C 9, 2311-2320 (2021) DOI http://dx.doi.org/10.1039/D0TC04101G
  3. Author M. Budde, D. Splith, P. Mazzolini, A. Tahraoui, J. Feldl, M. Ramsteiner, H. v. Wenckstern, M. Grundmann, O. Bierwagen Title SnO/β-Ga2O3 vertical pn heterojunction diodes Journal Applied Physics Letters 117, 252106 (2020) DOI https://doi.org/10.1063/5.0031442
  4. Author M. Budde, P. Mazzolini, J. Feldl, C. Golz, T. Nagata, S. Ueda, G. Hoffmann, F. Hatami, W. Ted Masselink, M. Ramsteiner, O. Bierwagen Title Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass Journal Physical Review Materials 4, 124602 (2020) DOI https://doi.org/10.1103/PhysRevMaterials.4.124602
  5. Author P. Mazzolini, A. Falkenstein, Z. Galazka, M. Martin, O. Bierwagen Title Offcut-related step-flow and growth rate enhancement during (100) beta-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) Journal Applied Physics Letters 117, 222105 (2020) DOI https://doi.org/10.1063/5.0031300
  6. Author A. Papadogianni, J. Rombach, T. Berthold, V. Polyakov, S. Krischok, M. Himmerlich, and O. Bierwagen Title Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping Journal Phys. Rev. B 102, 07530 (2020) DOI https://link.aps.org/doi/10.1103/PhysRevB.102.075301
  7. Author P. Mazzolini, O. Bierwagen Title Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: the impact of substrate offcut and metal-to-oxygen flux ratio Journal J. Phys. D: Appl. Phys 53, 354003 (2020) DOI https://doi.org/10.1088/1361-6463/ab8eda
  8. Author S. Tillack, A. Gulans, C. Draxl Title Maximally localized Wannier functions within the (L)APW+LO method Journal Phys. Rev. B 101, 235102 (2020) DOI https://doi.org/10.1103/PhysRevB.101.235102
  9. Author S. Bin Anooza, R. Grüneberg, C. Wouters, R. Schewski, M. Albrecht, A. Fiedler, K. Irmscher, Z. Galazka, W. Miller, G. Wagner, J. Schwarzkopf, and A. Popp Title Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE Journal Appl. Phys. Lett. 116, 182106 (2020) DOI https://doi.org/10.1063/5.0005403
  10. Author J. Boy, M. Handwerg, R. Mitdank, Z. Galazka, S. F. Fischer Title Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals Journal AIP Advances 10, 055005 (2020) DOI https://doi.org/10.1063/5.0002847
  11. Author Z. Galazka Title Czochralski Methods Journal Book chapter Springer Series in Material Science: Gallium Oxide - Czochralski Methods pp 15-36 (2020) DOI https://doi.org/10.1007/978-3-030-37153-1_2
  12. Author O. Bierwagen, P. Vogt, P. Mazzolini Title Plasma-Assisted Molecular Beam Epitaxy 2: Fundamentals of Suboxide-Related Growth Kinetics, Thermodynamics, Catalysis, Polymorphs, and Faceting Journal SSMATERIALS (Book chapter Springer Series in Material Science: Gallium Oxide - Plasma-Assisted Molecular Beam Epitaxy 2) 293, 95-121 (2020) DOI https://doi.org/10.1007/978-3-030-37153-1_6
  13. Author Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M.E. Witkowski, M. Makowski, A.J. Wojtowicz, I.M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann Title Bulk ß-Ga2O3 Single Crystals Doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si Obtained by the Czochralski Method for Detection of Nuclear Radiation Journal J. Alloys Compounds 818, 152842 (2020) DOI https://doi.org/10.1016/j.jallcom.2019.152842
  14. Author G. Hoffmann, M. Budde, P. Mazzolini, and O. Bierwagen Title Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O Journal APL Materials 8, 031110 (2020) DOI https://doi.org/10.1063/1.5134444
  15. Author P. Mazzolini, A. Falkenstein, C. Wouters, R. Schewski, T. Markurt, Z. Galazka, M. Martin, M. Albrecht, and O. Bierwagen Title Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (201) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) Journal APL Materials 8, 011107 (2020) DOI https://doi.org/10.1063/1.5135772
  16. Author "M. Budde, T. Remmele, C. Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht, O. Bierwagen" Title Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) Journal J. Appl. Phys. 127, 015306 (2020) DOI https://doi.org/10.1063/1.5129881
  17. Author A. Fiedler Title Electrical and optical characterization of ß-Ga2O3 Journal PhD Thesis DOI http://dx.doi.org/10.18452/20958
  18. Author Z. Galazka, K. Irmscher, R. Schewski, I.M. Hanke, M. Pietsch, S. Ganschow, D. Klimm, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann Title Czochralski-Grown Bulk ß-Ga2O3 Single Crystals Doped with Mono-, Di-, Tri-, and Tetravalent Ions Journal J. Crystal Growth 529, 125297 (2020) DOI https://doi.org/10.1016/j.jcrysgro.2019.125297
  19. Author "C. Golz, Z. Galazka, J. Lähnemann, V. Hortelano, F. Hatami, W. Ted Masselink, O. Bierwagen" Title Electrical conductivity tensor of β-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries Journal Phys. Rev. Mater 3, 124604 (2019) DOI https://doi.org/10.1103/PhysRevMaterials.3.124604
  20. Author C. Guguschev, D. Klimm, M. Brützam, T. M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V. J. Fratello, D.G. Schlom Title Single crystal growth and characterization of Ba2ScNbO6 - a novel substrate for BaSnO3 films Journal Journal of Crystal Growth 528, 125263 (2019) DOI https://doi.org/10.1016/j.jcrysgro.2019.125263
  21. Author A. Fiedler, Z. Galazka, K. Irmscher Title Electroluminescence of Cr3+ and pseudo-Stark effect in ß-Ga2O3 Schottky barrier diodes Journal Journal of Applied Physics 126, 213104 (2019) DOI https://doi.org/10.1063/1.5125774
  22. Author "M. Ramsteiner, J. Feldl, and Z. Galazka " Title Signatures of free carriers in Raman spectra of cubic In2O3 Journal Semicond. Sci. Technol. 35, 015017 (2020) DOI https://doi.org/10.1088/1361-6641/ab5615
  23. Author D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, D.G. Schlom Title REScO3 Substrates: Purveyors of Strain Engineering Journal Cryst. Res. Technol. Volume 55, Issue 2 (2020) DOI https://doi.org/10.1002/crat.201900111
  24. Author A. Fiedler, R. Schewski, Z. Galazka, and K. Irmscher Title Static Dielectric Constant of ß-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001) Journal ECS J. Solid State Sci. Technol. 8, Q3083-Q3085 (2019) DOI https://doi.org/10.1149/2.0201907jss
  25. Author C. Sutton, L. M. Ghiringhelli, T. Yamamoto, Y. Lysogorskiy, L. Blumenthal, T. Hammerschmidt, J. R. Golebiowski, X. Liu, A. Ziletti, and M. Scheffler Title Crowd-sourcing materials-science challenges with the NOMAD 2018 Kaggle competition Journal npj Computational Materials 5, 111 (2019). DOI https://doi.org/10.1038/s41524-019-0239-3
  26. Author C. Guguschev, D. Klimm, M. Brützam, T. M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V. J. Fratello, D. G. Schlom Title Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films Journal J. Crystal Growth 528, 125263 (2019). DOI https://doi.org/10.1016/j.jcrysgro.2019.125263
  27. Author D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, and D. G. Schlom Title REScO3 Substrates – Purveyors of Strain Engineering Journal Cryst. Res. Technol. 1900111 (2019). DOI https://doi.org/10.1002/crat.201900111
  28. Author C. Golz, F. Hatami, Z. Galazka, A. Popp, S.B. Anooz, G. Wagner, and W. T. Masselink Title Deep-level noise characterization of MOVPE-grown ß-Ga2O3 Journal Appl. Phys. Lett. 115, 133504 (2019). DOI https://doi.org/10.1063/1.5098994
  29. Author C. Vorwerk, B. Aurich, C. Cocchi, and C. Draxl Title Bethe-Salpeter equation for absorption and scattering spectroscopy: Implementation in the exciting code Journal Electronic Structure 1, 037001 (2019). DOI https://iopscience.iop.org/article/10.1088/2516-1075/ab3123/meta
  30. Author R. Ahrling, J. Boy, M. Handwerg, O. Chiatti, R. Mitdank, G. Wagner, Z. Galazka, and S. F. Fischer Title Transport properties and finite size effects in ß-Ga2O3 thin films Journal Sci. Rep. 9, 13149 (2019). DOI https://doi.org/10.1038/s41598-019-49238-2
  31. Author M. Feneberg, J. Bläsing, T. Sekiyama, K. Ota, K. Akaiwa, K. Ichino, and R. Goldhahn Title Anisotropic phonon properties and effective electron mass in α-Ga2O3 Journal Appl. Phys. Lett 114, 142102 (2019). DOI https://doi.org/10.1063/1.5086731
  32. Author S. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Ablbrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka and G. Wagner Title Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy Journal J. Appl. Phys. 125, 195702 (2019). DOI https://doi.org/10.1063/1.5090213
  33. Author J. Hidde, C. Guguschev, and D. Klimm Title Thermal analysis and crystal growth of doped Nb2O5 Journal J. Crystal Growth 509, 60-65 (2019). DOI https://doi.org/10.1016/j.jcrysgro.2018.12.035
  34. Author T. Hirsch, C. Guguschev, A. Kwasniewski, S. Ganschow, and D. Klimm Title Investigation of the Nd2O3–Lu2O3–Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1−xScxO3 Journal J. Crystal Growth 505, 38-43 (2019). DOI https://doi.org/10.1016/j.jcrysgro.2018.10.003
  35. Author Z. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, T. Schröder, and M. Bickermann Title Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals Journal APL Materials 7, 022512 (2019). DOI https://doi.org/10.1063/1.5053867
  36. Author A. Fiedler, R. Schewski, Z. Galazka, and K. Irmscher Title Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001) Journal ECS J. Solid State Sci. Technol. 8, Q3083 (2019). DOI https://doi.org/10.1149/2.0201907jss
  37. Author C. Bartel, C. Sutton, B.R. Goldsmith, R. Ouyang, C.B. Musgrave, L.M. Ghiringhelli, and M. Scheffler Title New Tolerance Factor to Predict the Stability of Perovskite Oxides and Halides Journal Science Advances 5, eaav0693 (2019). DOI https://doi.org/10.1126/sciadv.aav0693
  38. Author J. Boy, M. Handwerg, R. Ahrling, R. Mitdank, G. Wagner, Z. Galazka, and S. Fischer Title Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films Journal APL Materials 7, 022526 (2019). DOI https://doi.org/10.1063/1.5084791
  39. Author R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S.V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht Title Step-flow growth in homoepitaxy of β-Ga2O3 (100) – the influence of the miscut direction and faceting Journal APL Materials 7, 022515 (2019). DOI https://doi.org/10.1063/1.5054943
  40. Author P. Mazzolini, P. Vogt, R. Schewski, C. Wouters, M. Albrecht, and O. Bierwagen Title Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy Journal APL Materials 7, 022511 (2019). DOI https://doi.org/10.1063/1.5054386
  41. Author J. E. Boschker, T. Markurt, M. Albrecht, and J. Schwarzkopf Title Heteroepitaxial Growth of T-Nb2O5 on SrTiO3 Journal Nanomaterials 8, 895 (2018). DOI https://doi.org/10.3390/nano8110895
  42. Author C. Guguschev, J. Hidde, T. M. Gesing, M. Gogolin, and D. Klimm Title Czochralski growth and characterization of TbxGd1-xScO3 and TbxDy1−xScO3 solid-solution single crystals Journal CrystEngComm. 20, 2868-2876 (2018). DOI https://doi.org/10.1039/C8CE00335A
  43. Author M. Feneberg, J. Nixdorf, M. D. Neumann, N. Esser, L. Artús, R. Cuscó, T. Yamaguchi, and R. Goldhahn Title Ordinary dielectric function of corundumlike α-Ga2O3 from 40 meV to 20 eV
    Journal Phys. Rev. Mat. 2, 044601 (2018). DOI https://doi.org/10.1103/PhysRevMaterials.2.044601
  44. Author Z. Galazka Title β-Ga2O3 for wide-bandgap electronics and optoelectronics
    Journal Semicond. Sci. Technol. 33, 113001 (2018). DOI https://doi.org/10.1088/1361-6641/aadf78
  45. Author B. Thielert, C. Janowitz, Z. Galazka, and M. Mulazzi Title Theoretical and experimental investigation of the electronic properties of the wide band-gap transparent semiconductor MgGa2O4 Journal Phys. Rev. B 97, 235309 (2018). DOI https://doi.org/10.1103/PhysRevB.97.235309
  46. Author Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert Title Thermal expansion of single-crystalline β-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction Journal Applied Physical Letters 113, 182102 (2018). DOI https://doi.org/10.1063/1.5054265
  47. Author Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert Title Growth mode evolution during (100)-oriented β-Ga2O3 homoepitaxy Journal Nanotechnology 29, 395705 (2018). DOI http://dx.doi.org/10.1088/1361-6528/aad21b
  48. Author P. Vogt and O. Bierwagen Title Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 Journal Physical Review Materials 2, 120401(R) (2018). DOI http://dx.doi.org/10.1103/PhysRevMaterials.2.120401
  49. Author M. Baldini, Z. Galazka, and G. Wagner Title Recent progress in the growth of β-Ga2O3 for power electronics applications Journal Materials Science in Semiconductor Processing 78, 132–146 (2018). DOI https://doi.org/10.1016/j.mssp.2017.10.040
  50. Author M. Budde, C. Tschammer, P. Franz, J. Feldl, M. Ramsteiner, R. Goldhahn, M. Feneberg, N. Barsan, A. Oprea, and O. Bierwagen Title Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy Journal J. Appl. Phys. 123, 195301 (2018). DOI https://doi.org/10.1063/1.5026738
  51. Author Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, and M. Bickermann Title Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al Journal Journal of Crystal Growth 486, 82 (2018). DOI https://doi.org/10.1016/j.jcrysgro.2018.01.022
  52. Author S. Kokott, S.V. Levchenko, P. Rinke, and M. Scheffler Title First-principles supercell calculations of small polarons with proper account for long-range polarization effects Journal New J. Phys. 20, 033023 (2018). DOI https://doi.org/10.1088/1367-2630/aaaf44
  53. Author J. Hidde, C. Guguschev, S. Ganschow, and D. Klimm Title Thermal conductivity of rare-earth scandates in comparison to other oxidic substrate crystals Journal Journal of Alloys and Compounds 738, 415–421 (2018). DOI https://doi.org/10.1016/j.jallcom.2017.12.172
  54. Author O. Bierwagen, Z. Galazka Title The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications Journal Appl. Phys. Lett. 112, 092105 (2018). DOI https://doi.org/10.1063/1.5018983
  55. Author A. Papadogianni, L. Kirste, O. Bierwagen Title Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors Journal Appl. Phys. Lett. 111, 262103 (2017). DOI https://doi.org/10.1063/1.5006421
  56. Author P. Vogt, O. Brandt, H. Riechert, J. Lähnemann, O. Bierwagen Title Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors Journal Phys. Rev. Lett. 119, 196001 (2017). DOI https://doi.org/10.1103/PhysRevLett.119.196001
  57. Author A. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, and K. Irmscher Title Influence of incoherent twin boundaries on the electrical properties of β−Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy Journal J. Appl. Phys. 122, 165701 (2017). DOI http://dx.doi.org/10.1063/1.4993748
  58. Author Z. Cheng, M. Hanke, P. Vogt, O. Bierwagen, and A. Trampert Title Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction Journal Appl. Phys. Lett. 111, 162104 (2017). DOI https://doi.org/10.1063/1.4998804
  59. Author M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, and G. Wagner Title Si- and Sn-doped homoepitaxial beta-Ga2O3 layers grown by MOVPE on (010)-oriented substrates Journal ECS Journal of Solid State Science and Technology 6, Q3040 (2017). DOI https://doi.org/10.1149/2.0081702jss
  60. Author C. Guguschev, D.J. Kok, U. Juda, R. Uecker, S. Sintonen, Z. Galazka, M. Bickermann Title Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity Journal J. Crystal Growth 468, 305-310 (2017). DOI https://doi.org/10.1016/j.jcrysgro.2016.10.048
  61. Author D. Klimm, C. Guguschev, D.J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M.D. Neumann, A. Kwasniewski, D.G. Schlom, and M. Bickermann Title Crystal growth and characterization of the pyrochlore Tb2Ti2O7 Journal CrystEngComm 19, 3908–3914 (2017). DOI https://doi.org/10.1039/C7CE00942A
  62. Author M. Schmidbauer, M. Hanke, A. Kwasniewski, D. Braun, L. von Helden, C. Feldt, S. J. Leake, and J. Schwarzkopf Title Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3 Journal Journal of Applied Crystallography 50, 519 (2017). DOI https://doi.org/10.1107/S1600576717000905
  63. Author C. Vorwerk, C. Cocchi, and C. Draxl Title Addressing electron-hole correlation in core excitations of solids: An all-electron many-body approach from first principles Journal Phys. Rev. B 95, 155121 (2017). DOI https://doi.org/10.1103/PhysRevB.95.155121
  64. Author C. Guguschev, J. Philippen, D.J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram, and M. Bickermann Title Czochralski growth and characterization of cerium doped calcium scandate Journal CrystEngComm 19, 2553–2560 (2017). DOI https://doi.org/10.1039/C7CE00445A
  65. Author W. Miller, K. Böttcher, Z. Galazka, and J. Schreuer Title Numerical modelling of the Czochralski growth of β-Ga2O3 Journal Crystals 7, xxx (2017). DOI https://doi.org/10.3390/cryst7010026
  66. Author R. Uecker, R. Bertram, M. Brützam, Z. Galazka, T. M. Gesing, C. Guguschev, D. Klimm, M. Klupsch, A. Kwasniewski, and D. G. Schlom Title Large lattice-parameter Perovskite single-crystal substrates Journal Journal of Crystal Growth 457, 137 (2017). DOI https://doi.org/10.1016/j.jcrysgro.2016.03.014
  67. Author Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann Title Melt growth and properties of bulk BaSnO3 single crystals Journal Journal of Physics: Condensed Matter 29, 075701 (2017). DOI https://doi.org/10.1088/1361-648x/aa50e2
  68. Author M. Handwerg, R. Mitdank, Z. Galazka, and S. F. Fischer Title Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating  ß-Ga2O3 single crystal along [100], [010] and [001] Journal Semicond. Sci. Technol. 31, 125006 (2016). DOI https://doi.org/10.1088/0268-1242/31/12/125006
  69. Author R. Schewski, M. Baldini, K. Irmscher, A. Fiedler, T. Markurt, B. Neuschulz, T. Remmele, T. Schulz, G. Wagner, Z. Galazka, M. Albrecht Title Evolution of planar defects during homoepitaxial growth of ß-Ga2O3 layers on (100) substrates - a quantitative model Journal J. Appl. Phys. 120, (2016). DOI https://doi.org/10.1063/1.4971957
  70. Author Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, and M. Bickermann Title Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method Journal ECS Journal of Solid State Science and Technology 6, Q3007 Q3011 (2016). DOI https://doi.org/10.1149/2.0021702jss
  71. Author C. Cocchi, H. Zschiesche, D. Nabok, A. Mogilatenko, M. Albrecht, Z. Galazka, H. Kirmse, C. Draxl, and C. T. Koch Title Atomic signatures of local environment from core-level spectroscopy in β-Ga2O3 Journal Phys. Rev. B 94, 075147 (2016). DOI https://doi.org/10.1103/PhysRevB.94.075147
  72. Author P. Vogt and O. Bierwagen Title Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Journal Appl. Phys. Lett. 109, 062103 (2016). DOI https://doi.org/10.1063/1.4960633
  73. Author P. Vogt and O. Bierwagen Title Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3 Journal APL Mater. 4, 086112, (2016). DOI https://doi.org/10.1063/1.4961513